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2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1075-0400 (Previous: ADE-208-750B) Rev.4.00 Sep 07, 2005
Features
* Low on-resistance RDS =45 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4 4 G
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
D 1. Gate 2. Drain 3. Source 4. Drain
1 1 2 3
2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 8
2SK3150(L), 2SK3150(S)
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 100 20 20 80 20 20 40 50 150 -55 to +150 Unit V V A A A A mJ W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 20 -- -- 1.0 -- -- 8.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 45 65 14 900 400 210 15 120 200 150 0.9 90 Max -- -- 10 10 2.5 60 85 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A, VGS = 10 VNote4 ID = 10 A, VGS = 4 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 10 A, VGS = 10 V, RL = 3
IF = 20 A, VGS = 0 IF = 20 A, VGS = 0 diF/ dt = 50 A/s
Rev.4.00 Sep 07, 2005 page 2 of 8
2SK3150(L), 2SK3150(S)
Main Characteristics
Power vs. Temperature Derating
80 500 100 30
1
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
60
10
DC
10 3 1 0.3
40
PW
Op er
0 s ms s
10
=1
on
20
0
50
100
150
200
0.1 Ta = 25C 0.05 0.5 1 2 5 10 20
1s ho 25 t) Operation in C ) this area is limited by RDS(on)
(T c=
ati
0m
s(
50 100 200 500
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 4V 3.5 V Pulse Test 20
Typical Transfer Characteristics
VDS = 10 V Pulse Test
Drain Current ID (A)
12 3V 8
Drain Current ID (A)
16
10 V 6V
16
12
8 Tc = 75C 4 -25C 25C
4
VGS =2.5 V
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
500 Pulse Test 200 100 50
Drain to Source Saturation Voltage VDS (on) (V)
2.5
Pulse Test
2.0
1.5
Static Drain to Source on State Resistance RDS (on) (m)
VGS = 4 V
1.0 ID = 15 A 0.5 10 A 5A 0 4 8 12 16 20
10 V
20 10 1 2 5 10 20 50 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 3 of 8
2SK3150(L), 2SK3150(S)
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
250 Pulse Test 200 50 20 Tc = -25C 10 75C 5 2 1 0.5 0.1
VDS = 10 V Pulse Test
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
25C
150 15 A 100
VGS = 4 V
5,10 A
50 10 V 0 -40 0 40
15 A 5,10 A
80
120
160
0.3
1
3
10
30
100
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
500 10000 di / dt = 50 A / s VGS = 0, Ta = 25C 5000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
200 100 50 20 10 5 2 1 0.1 0.3 1
Capacitance C (pF)
2000 1000 500 200 100 50 20 10
VGS = 0 f = 1 MHz
Ciss
Coss
Crss
3
10 30
50
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
200 ID = 15 A
VDD = 100 V 50 V 25 V VGS
Switching Characteristics
20 1000 500
VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 % td(off)
160
16
Switching Time t (ns)
200
tf
120 V DS 80
12
100 50
tr
8
40
VDD = 100 V 50 V 25 V
4 0 100
20 10 0.1 0.2
td(on)
0
20
40
60
80
0.5
1
2
50
10
20
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.4.00 Sep 07, 2005 page 4 of 8
2SK3150(L), 2SK3150(S)
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
(A)
20
Repetitive Avalanche Energy EAR (mJ)
Pulse Test
50
IAP = 20 A VDD = 50 V duty < 0.1 % Rg > 50
Reverse Drain Current IDR
16
40
12
10 V 5V
30
8
20
4
VGS = 0, -5 V
10 0 25
0
0.2
0.4
0.6
0.8
1.0
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 2.5C/W, Tc = 25C
PDM PW T
0.03
0.02 1 lse 0.0 t pu ho 1s
D=
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width Avalanche Test Circuit
VDS Monitor L IAP Monitor
PW (S) Avalanche Waveform
EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP
Rg
D. U. T
VDD
VDS
ID
Vin 15 V 50 0 VDD
Rev.4.00 Sep 07, 2005 page 5 of 8
2SK3150(L), 2SK3150(S)
Switching Time Test Circuit
Vin Monitor D.U.T. RL VDD = 30 V Vin Vout 10% 10% 10% Vout Monitor
Switching Time Waveforms
90%
Vin 10 V
50
90% td(on) tr
90% td(off) tf
Rev.4.00 Sep 07, 2005 page 6 of 8
2SK3150(L), 2SK3150(S)
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004AE-A
Package Name LDPAK(L) / LDPAK(L)V
MASS[Typ.] 1.40g
Unit: mm
(1.4)
4.44 0.2 10.2 0.3 1.3 0.15
11.3 0.5 0.3 10.0 + 0.5 -
8.6 0.3
1.3 0.2 1.37 0.2
0.76 0.1 2.54 0.5 2.54 0.5
11.0 0.5
0.2 0.86 + 0.1 -
2.49 0.2
0.4 0.1
JEITA Package Code SC-83
RENESAS Code PRSS0004AE-B
Package Name LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Rev.4.00 Sep 07, 2005 page 7 of 8
1.7
1.3 0.15
7.8 6.6
2SK3150(L), 2SK3150(S)
Ordering Information
Part Name 2SK3150L-E 2SK3150STL-E Quantity 500 pcs 1000 pcs Box (Sack) Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Sep 07, 2005 page 8 of 8
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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Colophon .3.0

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